Turn on more accessible mode
Turn off more accessible mode
Sign In
عربي
physics department
Toggle navigation
Home
About the department
Department in Brief
Department Message
Vision and Mission
Goals and values
Contact us
Courses
study plan
Faculty staff
More
Related Links
Gallery
Forms
Home
/
Colleges And Institutes
/
Faculty of Science
/
Departments
/
Physics
/
ResearchesDetails
Band gap controlling of doped bulk silicon carbide structure under the influence of tensile stress: DFT
Band gap controlling of doped bulk silicon carbide structure under the influence of tensile stress: DFT
Publishing Year
2022
